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Graphite Purification
Features:
⏺ High-temperature purification of graphite bulk materials used in the semiconductor industry. Through high temperature and low pressure atmosphere, purity can be increased from 3N to 5~6N.
⏺ Effectively removes impurity elements (such as metals and oxides), significantly reducing material impurity to below 5 ppm, meeting the requirements of extremely high cleanliness processes in semiconductor manufacturing.
⏺ Combining multi-stage precision high-temperature heat treatment with a special atmosphere control mechanism, it not only has higher impurity removal efficiency but also avoids damage to the material structure.
Applications:
(1) Graphite crucibles and hot zones for single crystal furnaces (crystal growth)
(2) Graphite support plates for MOCVD epitaxy equipment
(3) Graphite components for ion implantation machines
(4) High-purity carbon powder for SiC crystal growth raw materials
Services:
◼️ Provides overall design and contract manufacturing services for graphite bulk and powder purification.
Product:
⏺ Purified graphite blocks
(1) Purity: > 99.9995% (5N5)
(2) Impurity content: < 5 ppm
(3) Surface cleanliness: Meets semiconductor grade specifications
(4) GDMS purity analysis results:
Purity: 99.999929% Impurity: 0.71ppm
⏺ High-purity carbon powder
Features: 1. Product purity ≥ 99.9998 wt% (5N8)
2. Good stability
3. High graphitization and low impurities
Applications: 1. Synthesis of high-purity SiC powder or other solid-phase synthetic materials
2. Lab-grown diamonds
3. New thermal conductive materials for electronic products
Physicochemical properties:
